An OCB device comprises upper and lower substrates (1, 1'), each provided with an alignment layer (2,2'). A liquid crystal layer (3) is provided between the substrates. The lower substrate (1') has a low pre-tilt in regions A and C, so that an H-state is stable in these regions when no voltage is applied across the liquid crystal layer. Region B has a high pre-tilt on the lower substrate 1', so that a HAN state is stable in region B under zero applied voltage. When a voltage is applied across the liquid crystal layer (3) a V-state is formed at the interface between the HAN-state and the H-states. This V-state then displaces the H-states in regions A and C. The high pre-tilt region, region B, is acting as a nucleation region. The V-state forms at a lower applied voltage than if the nucleation region is not provided.