发明公开
- 专利标题： On-chip single layer horizontal deflecting waveguide and damascene method of fabricating the same
- 专利标题（中）： 片上单层水平偏转波导和镶嵌制造工艺
-
申请号： EP99124884.0申请日： 1999-12-16
-
公开(公告)号： EP1014121A3公开(公告)日： 2003-05-14
- 发明人: Hornbeck, Verne C. , Allman, Derryl D.J.
- 申请人： LSI LOGIC CORPORATION
- 申请人地址： 1551 McCarthy Boulevard MS D-106 Milpitas, CA 95035 US
- 专利权人： LSI LOGIC CORPORATION
- 当前专利权人： LSI LOGIC CORPORATION
- 当前专利权人地址： 1551 McCarthy Boulevard MS D-106 Milpitas, CA 95035 US
- 代理机构： Menges, Rolf, Dipl.-Ing.
- 优先权： US217182 19981221
- 主分类号： G02B6/125
- IPC分类号： G02B6/125
摘要：
A horizontal deflecting optical waveguide (22) is formed in an integrated circuit-like structure (20) having a substrate and at least one layer of dielectric material (26) above the substrate. A trench is formed in the dielectric material (26), and the trench has first and second portions (22a, 22b) angularly joined at a bent portion (34). A reflective layer (30) of material adjoins, conforms to and extends along the side walls of the trench. A core (32) of optically transmissive material conforms to the reflective layer (30) within the trench. The reflective layer (30) forms a wall (35) at the bent portion (34) which reflects light from the core (32) located in one portion (22a) into the core (32) located in the other portion (22b).
公开/授权文献
信息查询
