A ferroelectric Pb 5 Ge 3 O 11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis orientation at temperature between 450 and 650° C. The PGO film has an average grain size of about 0.5 microns, with a deviation in grain size uniformity of less than 10%. Good ferroelectric properties are obtained for a 150 nm thick film with Ir electrodes. The films also show fatigue-free characteristics: no fatigue was observed up to 1 x 10 8 switching cycles. The leakage currents increase with increasing applied voltage, and are about 3.6 x10 -7 A/cm 2 at 100 kV/cm. The dielectric constant shows a behavior similar to most ferroelectric materials, with a maximum dielectric constant of about 45. These high quality MOCVD Pb 5 Ge 3 O 11 films can be used for high density single transistor ferroelectric memory applications because of the homogeneity of the PGO film grain size.