发明公开
EP1052701A3 Capacitor, semiconductor device, and manufacturing method thereof
审中-公开
冷凝器，Halbleiterbauelement und deren Herstellungsverfahren
- 专利标题： Capacitor, semiconductor device, and manufacturing method thereof
- 专利标题（中）： 冷凝器，Halbleiterbauelement und deren Herstellungsverfahren
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申请号： EP00110377.9申请日： 2000-05-15
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公开(公告)号： EP1052701A3公开(公告)日： 2005-01-12
- 发明人: Murakami, Satoshi , Hirakata, Yoshiharu , Fujimoto, Etsuko , Yamazaki, Yu , Yamazaki, Shunpei
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： 398 Hase Atsugi-shi Kanagawa-ken 243-0036 JP
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： 398 Hase Atsugi-shi Kanagawa-ken 243-0036 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： JP13499299 19990514
- 主分类号： G02F1/1362
- IPC分类号： G02F1/1362 ; G02F1/161 ; H01L27/12
摘要：
A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.
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