发明公开
- 专利标题： Process for manufacture of trench DRAM capacitor
- 专利标题（中）： 赫尔斯特朗·赫斯特伦
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申请号： EP00306332.8申请日： 2000-07-25
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公开(公告)号： EP1073115A2公开(公告)日： 2001-01-31
- 发明人: Gruening, Ulrike , Radens, Carl J. , Tobben, Dirk
- 申请人： Infineon Technologies North America Corp. , International Business Machines Corporation
- 申请人地址： 1730 North First Street San Jose, CA 95112-6000 US
- 专利权人： Infineon Technologies North America Corp.,International Business Machines Corporation
- 当前专利权人： Infineon Technologies North America Corp.,International Business Machines Corporation
- 当前专利权人地址： 1730 North First Street San Jose, CA 95112-6000 US
- 代理机构： Vigars, Christopher Ian
- 优先权： US354743 19990729
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A process for manufacturing a deep trench capacitor in a trench. The capacitor comprises a collar in an upper region of the trench and a buried plate in a lower region of the trench. The improvement comprises, before forming the collar in the trench upper region, filling the trench lower region with a non-photosensitive underfill material such as spin-on-glass. The process may comprise the steps of (a) forming a deep trench in a substrate; (b) filling the trench lower region with an underfill material; (c) forming a collar in the trench upper region; (d) removing the underfill; and (e) forming a buried plate in the trench lower region.
公开/授权文献
- EP1073115A3 Process for manufacture of trench DRAM capacitor 公开/授权日：2004-08-04
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