发明公开
EP1091418A2 NROM cell with self-aligned programming and erasure areas
审中-公开
NROM-Zelle mit selbstjustierten Schreib- undLöschgebieten
- 专利标题： NROM cell with self-aligned programming and erasure areas
- 专利标题（中）： NROM-Zelle mit selbstjustierten Schreib- undLöschgebieten
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申请号： EP00308781.4申请日： 2000-10-05
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公开(公告)号： EP1091418A2公开(公告)日： 2001-04-11
- 发明人: Eitan, Boaz
- 申请人： Saifun Semiconductors Ltd
- 申请人地址： Bet HaSofer, Hamelacha Street 65 42504 Industrial Area South Netanya IL
- 专利权人： Saifun Semiconductors Ltd
- 当前专利权人： Saifun Semiconductors Ltd
- 当前专利权人地址： Bet HaSofer, Hamelacha Street 65 42504 Industrial Area South Netanya IL
- 代理机构： Kidd, Piers Burgess
- 优先权： US413408 19991006
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nitride programmable read only memory (NROM) cell has an oxide-nitride-oxide (ONO) layer (109, 110, 111) over at least a channel (100) and a pocket implant (120) self-aligned to at least one bit line junction (102). The cell also includes at least one area of hot electron injection within the ONO layer and over the pocket implant and at least one area of hot hole injection generally self-aligned to the area of hot electron injection.
公开/授权文献
- EP1091418A3 NROM cell with self-aligned programming and erasure areas 公开/授权日：2003-06-18
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