发明公开
- 专利标题： ZINC OXIDE FILMS CONTAINING P-TYPE DOPANT AND PROCESS FOR PREPARING SAME
- 专利标题（中）： p型掺杂的氧化锌和方法
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申请号： EP99945010.9申请日： 1999-08-02
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公开(公告)号： EP1103076A1公开(公告)日： 2001-05-30
- 发明人: WHITE, Henry, W. , ZHU, Shen , RYU, Yungryel
- 申请人： THE CURATORS OF THE UNIVERSITY OF MISSOURI
- 申请人地址： 509 Lewis Hall Columbia, MO 65211 US
- 专利权人： THE CURATORS OF THE UNIVERSITY OF MISSOURI
- 当前专利权人： THE CURATORS OF THE UNIVERSITY OF MISSOURI
- 当前专利权人地址： 509 Lewis Hall Columbia, MO 65211 US
- 代理机构： Smaggasgale, Gillian
- 优先权： US128516 19980803
- 国际公布： WO0008691 20000217
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A p-type zinc oxide film and process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 17 acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50cm 2 /Vs.
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