The object is to provide a laminated radiation member and a power semiconductor apparatus in which no cracks occur due to thermal stress caused by cooling and thermal cycle and which are low in thermal resistance. This is attained by a laminated radiation member comprising a radiation plate, an insulation substrate bonded to the upper surface of the radiation plate and an electrode provided on the upper surface of the insulation substrate, which can be made by a method including a step of, if necessary, previously surface treating a bonding surface of the radiation plate and/or the insulation substrate to assure wettability with a hard solder or a metal, a step of interposing ceramic particles previously surface treated to assure wettability with a hard solder or a metal between the radiation plate and the insulation substrate, a step of disposing a hard solder above and/or below the ceramic particles, a step of heating the hard solder to a temperature higher than the melting point of the solder to melt the solder, a step of penetrating the molten hard solder into spaces between the ceramic particles to react the ceramic particles with the solder to produce a metal base composite material, and a step of bonding the radiation plate and the insulation substrate with the metal base composite material.