A method for forming an electrode. The method includes forming a conductive plug through a first dielectric layer. The plug extends from an upper surface of the first dielectric layer to a contact region in a semiconductor substrate. The electrode is formed photolithographically, misalignment of a mask registration in the photolithography resulting in exposing surface portions of the barrier contact. A second dielectric layer is deposited over the first dielectric layer, over side portions and top portions of the formed electrode, and over the exposed portions of barrier contact. A sacrificial material is provided on portions of the second dielectric layer disposed on lower sides of the electrode, on portions of the second dielectric layer disposed on the first dielectric layer, and on said exposed portions of the barrier contact while exposing portions of the second dielectric layer on the top portions and upper side portions of the formed electrode. The exposed portions of the second dielectric layer are removed while leaving the portions of the second dielectric layer on the exposed portions of the barrier contact. A material is deposited over exposed portions of the first electrode and over remaining portions of the second dielectric layer in an oxidizing environment. A second electrode is formed for the storage element over the material. In forming a capacitor storage element, the portion of the second dielectric layer on the barrier contact prevents oxidation of the barrier contact during the material formation process.