发明公开
EP1134809A2 Ultra high speed heterojunction bipolar transistor having a cantilivered base
审中-公开
Heteroübergang-Bipolartransistor mit ultra hoher Geschwindigkeit und einer freitragenden Basis
- 专利标题： Ultra high speed heterojunction bipolar transistor having a cantilivered base
- 专利标题（中）： Heteroübergang-Bipolartransistor mit ultra hoher Geschwindigkeit und einer freitragenden Basis
-
申请号： EP01106729.5申请日： 2001-03-16
-
公开(公告)号： EP1134809A2公开(公告)日： 2001-09-19
- 发明人: Gutierrez-Aitken, Augusto L. , Oki, Aaron Kenji , Kaneshiro, Eric N. , Streit, Dwight Christopher
- 申请人： TRW Inc.
- 申请人地址： One Space Park Redondo Beach, California 90278 US
- 专利权人： TRW Inc.
- 当前专利权人： TRW Inc.
- 当前专利权人地址： One Space Park Redondo Beach, California 90278 US
- 代理机构： Schmidt, Steffen J., Dipl.-Ing.
- 优先权： US526760 20000316; US776513 20010202
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L29/10 ; H01L21/331
摘要：
Reduction in the base to collector capacitance of a heterojunction bipolar transistor, and, improved high frequency performance is achieved using existing materials and processes by undercutting the collector (5)under the base (7) along two parallel sides of the base mesa (7 - Fig. 4), and providing a sloped collector edge (5-Fig. 6) along the remaining two parallel sides of the base. The foregoing is accomplished by selective etching and with the four sides of the mesa regions oriented as a non-rectangular parallelogram (7, 9 - Fig. 4) in which one pair of sides is in parallel with one of the said [0 0 1] and [0 0 1 ¯ ] planes of the crystalline structure and the other pair of sides in parallel with one of the [0 1 1] and [0 1 1 ¯ ] planes of the crystalline structure.
公开/授权文献
信息查询
IPC分类:
