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发明公开
EP1154434A1 Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip 失效
半导体器件及其制造方法，存储器核心芯片和存储器外围电路芯片

Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
摘要：
The semiconductor device of the invention includes a plurality of circuit blocks including a first circuit block and a second circuit block, a block parameter of the first circuit block being different from a block parameter of the second circuit block. In the semiconductor device, the first circuit block is formed on a first semiconductor chip, and the second circuit block is formed on a second semiconductor chip and is electrically connected with the first circuit block.
摘要（中）：

本发明的半导体器件包括多个电路块，所述多个电路块包括第一电路块和第二电路块，第一电路块的块参数不同于第二电路块的块参数。 在半导体器件中，第一电路块形成在第一半导体芯片上，并且第二电路块形成在第二半导体芯片上并且与第一电路块电连接。

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