发明公开
- 专利标题： SPEICHERZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG
- 专利标题（英）： Storage cell arrangement and method for producing the same
- 专利标题（中）： 存储器单元装置和方法及其
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申请号： EP00910521.4申请日： 2000-02-01
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公开(公告)号： EP1155462A1公开(公告)日： 2001-11-21
- 发明人: SCHWARZL, Siegfried
- 申请人： Infineon Technologies AG
- 申请人地址： St.-Martin-Strasse 53 81669 München DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： St.-Martin-Strasse 53 81669 München DE
- 代理机构： Epping Hermann & Fischer
- 优先权： DE19908519 19990226
- 国际公布： WO0052771 20000908
- 主分类号： H01L43/08
- IPC分类号： H01L43/08 ; G11C11/16
摘要：
The invention relates to a storage cell arrangement comprising a magnetoresistive element (11) which has a ring-shaped cross-section in a stratified plane. A first line (12) and a second line (13) which intersect each other are provided in said storage cell arrangement. The magnetoresistive element (11) is located in the intersection area between the first line (12) and the second line (13). Said first line (12) and/or said second line have at least one first line section (131) in which a current component which is oriented parallel to the stratified plane is predominant and a second line section (132) in which a current component which is oriented vertically to the stratified plane is predominant.
公开/授权文献
- EP1155462B1 SPEICHERZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG 公开/授权日：2005-09-07
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