发明公开
EP1178494A1 OXIDE SUPERCONDUCTOR, METHOD OF MANUFACTURE THEREOF, AND BASE MATERIAL OF OXIDE SUPERCONDUCTOR
审中-公开
OXID-SUPRALEITER，SEIN HERSTELLUNGSVERFAHREN UND BASISMATERIALFÜROXID-SUPRALEITER
- 专利标题： OXIDE SUPERCONDUCTOR, METHOD OF MANUFACTURE THEREOF, AND BASE MATERIAL OF OXIDE SUPERCONDUCTOR
- 专利标题（中）： OXID-SUPRALEITER，SEIN HERSTELLUNGSVERFAHREN UND BASISMATERIALFÜROXID-SUPRALEITER
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申请号： EP00915551.6申请日： 2000-04-17
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公开(公告)号： EP1178494A1公开(公告)日： 2002-02-06
- 发明人: KAKIMOTO, K., Int.Superconduct. Tech. Ctr , HOBARA, N., Int. Superconduct. Tech. Ctr , IZUMI, T, Int. Superconduct. Tech Ctr , SHIOHARA, Y, Int. Superconduct. Tech Ctr , NAKAMURA, Y, Int. Superconduct. Tech Ctr , OHMATSU, Kazuya, Sumitomo Elect. Ind. Ltd , FUJINO, Koso, Sumitomo Elect. Ind. Ltd
- 申请人： Fujikura Ltd. , The Tokyo Electric Power Co., Inc. , Railway Technical Research Institute , Sumitomo Electric Industries, Ltd. , International Superconductivity Technology Center, The Juridical Foundation
- 申请人地址： 5-1, Kiba 1-chome, Kohtoh-ku Tokyo 135-8512 JP
- 专利权人： Fujikura Ltd.,The Tokyo Electric Power Co., Inc.,Railway Technical Research Institute,Sumitomo Electric Industries, Ltd.,International Superconductivity Technology Center, The Juridical Foundation
- 当前专利权人： Fujikura Ltd.,The Tokyo Electric Power Co., Inc.,Railway Technical Research Institute,Sumitomo Electric Industries, Ltd.,International Superconductivity Technology Center, The Juridical Foundation
- 当前专利权人地址： 5-1, Kiba 1-chome, Kohtoh-ku Tokyo 135-8512 JP
- 代理机构： Burbaud, Eric
- 优先权： JP10861099 19990415; JP10861199 19990415
- 国际公布： WO0063926 20001026
- 主分类号： H01B12/06
- IPC分类号： H01B12/06 ; H01B13/00 ; C30B29/22
摘要：
An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 by the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.
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