发明授权
EP1190607B1 INTEGRATED CIRCUITS WITH COPPER METALLIZATION FOR INTERCONNECTIONS
有权
铜金属用于集成电路CONNECTIONS
- 专利标题: INTEGRATED CIRCUITS WITH COPPER METALLIZATION FOR INTERCONNECTIONS
- 专利标题(中): 铜金属用于集成电路CONNECTIONS
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申请号: EP00928360.7申请日: 2000-04-18
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公开(公告)号: EP1190607B1公开(公告)日: 2006-09-27
- 发明人: HOINKIS, Mark, D.
- 申请人: Infineon Technologies AG
- 申请人地址: St.-Martin-Strasse 53 81669 München DE
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: St.-Martin-Strasse 53 81669 München DE
- 代理机构: Göhring, Robert
- 优先权: US315091 19990519
- 国际公布: WO2000070924 20001123
- 主分类号: H05K3/10
- IPC分类号: H05K3/10 ; H01L21/768
摘要:
An improved fill of high aspect ratio trenches by copper is obtained by first sputtering a thin nucleating film of copper deposited by physical vapor deposition, then depositing a thin seed layer of copper by chemical vapor deposition, and then completing the fill by electroplating. Stress migration of the fill is improved if the copper deposition is preceded by the deposition by CVD of a layer of titanium nitride either alone or preceded and/or followed by the deposition of tantalum by an ionized PVD source.
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