发明公开
- 专利标题： A method for fabricating a III nitride film
- 专利标题（中）： 一种用于生产第三族氮化物构成的层的过程
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申请号： EP01124422.5申请日： 2001-10-11
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公开(公告)号： EP1197995A2公开(公告)日： 2002-04-17
- 发明人: Shibata, Tomohiko, c/o NGK Insulators , Nakamura, Yukinori, c/o NGK Insulators , Tanaka, Mitsuhiro, c/o NGK Insulators
- 申请人： NGK INSULATORS, LTD.
- 申请人地址： 2-56, Suda-cho, Mizuho-ku Nagoya City Aichi Pref. JP
- 专利权人： NGK INSULATORS, LTD.
- 当前专利权人： NGK INSULATORS, LTD.
- 当前专利权人地址： 2-56, Suda-cho, Mizuho-ku Nagoya City Aichi Pref. JP
- 代理机构： Leson, Thomas Johannes Alois, Dipl.-Ing.
- 优先权： JP2000313033 20001013
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; C30B25/02
摘要：
A III nitride film including Al element is fabricated by a MOCVD method with monitoring the dew point of the reactor to be used in the MOCVD method. An organic metal vapor flown in the reactor, the dew point is preferably set to a temperature of -90°C or below. Then, the film is fabricated.
公开/授权文献
- EP1197995B1 Method for fabricating a group III nitride film 公开/授权日：2011-01-05
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