发明公开
EP1220333A2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
审中-公开
一种用于制造半导体工艺制造的半导体衬底和半导体发光装置的方法
- 专利标题： Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
- 专利标题（中）： 一种用于制造半导体工艺制造的半导体衬底和半导体发光装置的方法
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申请号： EP01130498.7申请日： 2001-12-20
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公开(公告)号： EP1220333A2公开(公告)日： 2002-07-03
- 发明人: Ishibashi, Akihiko , Tsujimura, Ayumu , Kawaguchi, Yasutoshi , Otsuka, Nobuyuki , Ohnaka, Kiyoshi
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Oaza-Kadoma Kadoma-shi, Osaka 571-8501 JP
- 代理机构： Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
- 优先权： JP2000386624 20001220
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of Al x Ga 1-x N (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of Al u Ga v In w N (0
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