发明公开
EP1237183A1 METHOD FOR STABILIZING OXIDE-SEMICONDUCTOR INTERFACE BY USING GROUP 5 ELEMENT AND STABILIZED SEMICONDUCTOR
有权
方法稳定氧化物 - 半导体边界按用途5.HAUTGRUPPE的元素周期表中元素和规范半导体学报
- 专利标题： METHOD FOR STABILIZING OXIDE-SEMICONDUCTOR INTERFACE BY USING GROUP 5 ELEMENT AND STABILIZED SEMICONDUCTOR
- 专利标题（中）： 方法稳定氧化物 - 半导体边界按用途5.HAUTGRUPPE的元素周期表中元素和规范半导体学报
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申请号： EP00974913.6申请日： 2000-11-10
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公开(公告)号： EP1237183A1公开(公告)日： 2002-09-04
- 发明人: CHIKYO, Toyohiro, National Rrch. Inst. for Metals , YOSHIMOTO, Mamoru, National Rrch. Inst. for Metals
- 申请人： Japan Science and Technology Corporation , Japan as represented by Director General of National Research Institute for Metals
- 申请人地址： 1-8, Hon-cho 4-chome Kawaguchi-shi, Saitama 332-0012 JP
- 专利权人： Japan Science and Technology Corporation,Japan as represented by Director General of National Research Institute for Metals
- 当前专利权人： Japan Science and Technology Corporation,Japan as represented by Director General of National Research Institute for Metals
- 当前专利权人地址： 1-8, Hon-cho 4-chome Kawaguchi-shi, Saitama 332-0012 JP
- 代理机构： Calamita, Roberto
- 优先权： JP32222799 19991112
- 国际公布： WO01037330 20010525
- 主分类号： H01L21/316
- IPC分类号： H01L21/316
摘要：
The present invention provides a method for stabilizing an oxide-semiconductor interface, which is free from the formation of an interface layer (reactive layer) between a semiconductor and an interface oxide and which thereby allows satisfactory exhibition of performance capabilities of a functional oxide and achievement of the stability of oxide-semiconductor interface, yet independent of temperature; it also provides a stabilized semiconductor.
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