A light-emitting element (10) includes a transparent substrate (1), a III-V nitride semiconductor layer (2) including rare earth metal elements which is formed on said transparent substrate (1), and an irradiation source of electron beam (3) which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer (2) so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source (3) and a given fluorescence inherent to the rare earth metal elements are emitted.