发明公开
EP1256959A2 Programming method for non-volatile semiconductor memory device comprising twin-memory cells
审中-公开
Programmierverfahrenfüreinen nicht-flüchtigenHalbleiterspeicher mit Twin-Speicherzellen
- 专利标题： Programming method for non-volatile semiconductor memory device comprising twin-memory cells
- 专利标题（中）： Programmierverfahrenfüreinen nicht-flüchtigenHalbleiterspeicher mit Twin-Speicherzellen
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申请号： EP02002972.4申请日： 2002-02-11
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公开(公告)号： EP1256959A2公开(公告)日： 2002-11-13
- 发明人: Kanai, Masahiro , Kamei, Teruhiko
- 申请人： SEIKO EPSON CORPORATION , Halo LSI Design & Device Technology, Inc.
- 申请人地址： 4-1, Nishishinjuku 2-chome Shinjuku-ku, Tokyo 163-0811 JP
- 专利权人： SEIKO EPSON CORPORATION,Halo LSI Design & Device Technology, Inc.
- 当前专利权人： SEIKO EPSON CORPORATION,Halo LSI Design & Device Technology, Inc.
- 当前专利权人地址： 4-1, Nishishinjuku 2-chome Shinjuku-ku, Tokyo 163-0811 JP
- 代理机构： Hoffmann, Eckart, Dipl.-Ing.
- 优先权： JP2001141616 20010511
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C16/10
摘要：
A method is provided for programming data for a memory element of a twin memory cell (i). The word line WL1 is set to a programming word line selection voltage, the control gate CG[i + 1] is set to a programming control gate voltage, the control gate CG[i] is set to an over-ride voltage, the bit line BL [i + 1] is set to a programming bit line voltage, and the bit line BL[i] is connected to the constant current source.
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