发明公开
- 专利标题: GASVERSORGUNGSVORRICHTUNG FÜR PRECURSOREN GERINGEN DAMPFDRUCKS
- 专利标题(英): Gas supply device for precursors with a low vapor pressure
- 专利标题(中): 气体供给装置中,具有低蒸气压的前体
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申请号: EP01951109.6申请日: 2001-01-27
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公开(公告)号: EP1264002A1公开(公告)日: 2002-12-11
- 发明人: BAUCH, Hartmut , BEWIG, Lars , KLIPPE, Lutz , KÜPPER, Thomas
- 申请人: Schott Glas , Carl-Zeiss-Stiftung trading as Schott Glas
- 申请人地址: Hattenbergstrasse 10 55122 Mainz DE
- 专利权人: Schott Glas,Carl-Zeiss-Stiftung trading as Schott Glas
- 当前专利权人: Schott Glas,Carl-Zeiss-Stiftung trading as Schott Glas
- 当前专利权人地址: Hattenbergstrasse 10 55122 Mainz DE
- 代理机构: Dr. Weitzel & Partner
- 优先权: DE10005820 20000210
- 国际公布: WO01059176 20010816
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/448
摘要:
The invention relates to a gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. Said gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. According to the invention, the gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. According to a particularly advantageous embodiment, a first precursor vapor is mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor in the intermediate storage device is lower than that of the undiluted first precursor vapor at a constant overall pressure in said intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced. Reducing the temperature T2 allows less expensive components to be used.
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