发明公开
- 专利标题: THERMAL DIODE FOR ENERGY CONVERSION
- 专利标题(中): 热敏二极管进行能量转换
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申请号: EP01945922申请日: 2001-03-06
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公开(公告)号: EP1282935A4公开(公告)日: 2008-01-09
- 发明人: HAGELSTEIN PETER L , KUCHEROV YAN R
- 申请人: ENECO INC
- 专利权人: ENECO INC
- 当前专利权人: ENECO INC
- 优先权: US51964000 2000-03-06; US21356400 2000-06-22; US72105100 2000-11-22
- 主分类号: H01L35/32
- IPC分类号: H01L35/32 ; H01J45/00 ; H01L29/86 ; H01L35/00 ; H01L35/16 ; H01L35/18 ; H01L35/20 ; H01L35/30 ; H02N3/00
摘要:
Solid state thermionic energy converter semiconductor diode implementation and method for conversion of thermal energy to electric energy, and electric energy to refrigeration. In embodiments of this invention a highly doped n region (14) can serve as an emitter region, from which carriers can be injected into a gap region. The gap region (16) can be p-type, intrinsic, or moderately doped n-type (14). A hot ohmic contact (12) is connected to the n-type region. A cold ohmic contact (20) serves as a collector and is connected to the other side of the gap region. The cold ohmic contact has a recombination region formed between the cold ohmic contact and the gap region and a blocking compensation layer that reduces the thermoelectric back flow component. The heated emitter relative to the collector generates an emf which drives current through a series load. The inventive principle works for hole conductivity, as well as for electrons.
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