BOTTOM ANTI-REFLECTIVE COATING USING RAPID THERMAL ANNEAL WITH OXIDIZING GAS

Invention Grant

EP1297563B1 BOTTOM ANTI-REFLECTIVE COATING USING RAPID THERMAL ANNEAL WITH OXIDIZING GAS 有权

Title translation: 与KURZZEITTEMPERN氧化性气体ANTI REFLEX下层

Patent Title: BOTTOM ANTI-REFLECTIVE COATING USING RAPID THERMAL ANNEAL WITH OXIDIZING GAS
Patent Title (中): 与KURZZEITTEMPERN氧化性气体ANTI REFLEX下层
Application No.: EP01933280.8

Application Date: 2001-05-09
Publication No.: EP1297563B1

Publication Date: 2010-03-31
Inventor: STEPHEN, Alan, D. , EXTERKAMP, Michael, E. , DOAN, Jonathan
Applicant: GlobalFoundries, Inc.
Applicant Address: Maple Corporate Services Limited P.O. Box 309 Ugland House Grand Cayman KY1-1104 KY
Assignee: GlobalFoundries, Inc.
Current Assignee: GlobalFoundries, Inc.
Current Assignee Address: Maple Corporate Services Limited P.O. Box 309 Ugland House Grand Cayman KY1-1104 KY
Agency: Brookes Batchellor LLP
Priority: US577706 20000523
International Announcement: WO2001091168 20011129
Main IPC: H01L21/027
IPC: H01L21/027

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/027	..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜