发明公开
- 专利标题： DOPED ELONGATED SEMICONDUCTORS, THEIR GROWTH AND APPLICATIONS
- 专利标题（中）： 电气设备含有型半导体纳米线和方法及其
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申请号： EP01966109.9申请日： 2001-08-22
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公开(公告)号： EP1314189A2公开(公告)日： 2003-05-28
- 发明人: LIEBER, Charles, M. , CUI, Ying , DUAN, Xiangfeng , HUANG, Yung-Sheng
- 申请人： President And Fellows of Harvard College
- 申请人地址： Office of Technology & Trademark Licensing,Suite 727,Holyoke Center,1350 Massachusetts Avenue Cambridge, MA 02138 US
- 专利权人： President And Fellows of Harvard College
- 当前专利权人： President And Fellows of Harvard College
- 当前专利权人地址： Office of Technology & Trademark Licensing,Suite 727,Holyoke Center,1350 Massachusetts Avenue Cambridge, MA 02138 US
- 代理机构： Killin, Stephen James
- 优先权： US226835P 20000822; US254745P 20001211; US292121P 20010518; US292035P 20010518; US292045P 20010518; US291896P 20010518
- 国际公布： WO02017362 20020228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method comprises providing a population of catalyst particles and growing a population of semiconductor nanowires catalytically from the population of catalyst particles. The nanowires of the population have a variation in diameter of less than about 20%, and the nanowires of the population have a smallest width less than 500 nanometers. Preferably the nanowires of the population have a variation in diameter of less than about 10%.
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