发明公开
- 专利标题: CACHE MEMORY
- 专利标题(中): 高速缓存存储器
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申请号: EP01965439.1申请日: 2001-09-11
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公开(公告)号: EP1317710A1公开(公告)日: 2003-06-11
- 发明人: BARNES, William, Bryan
- 申请人: STMicroelectronics, Ltd.
- 申请人地址: 1000 Aztec West Almondsbury,Bristol, BS32 4SQ GB
- 专利权人: STMicroelectronics, Ltd.
- 当前专利权人: STMicroelectronics, Ltd.
- 当前专利权人地址: 1000 Aztec West Almondsbury,Bristol, BS32 4SQ GB
- 代理机构: Driver, Virginia Rozanne
- 优先权: GB0022323 20000912; GB0024541 20001006
- 国际公布: WO02023347 20020321
- 主分类号: G06F12/08
- IPC分类号: G06F12/08 ; G11C11/412
摘要:
An integrated cache memory circuit is provided comprising a tag RAM, a comparator and a data RAM. Each of the tag RAM and the date RAM have an array of memory cells and plural sense amplifiers. Each memory cell of the RAMs is connected via a respective bit line to one of the plural sense amplifiers. The sense amplifiers of the tag RAM have respective outputs coupled to a first input of the comparator. The comparator having a second input for address information and an output for selectively enabling data output from sense amplifiers of the data RAM. The memory cells of the tag RAM are arranged to have a higher current drive than the memory cells of the data RAM.
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