发明公开
EP1320902A4 THE SEMICONDUCTOR LED DEVICE AND PRODUCING METHOD
有权
HELLBLEITER-LED-BAUELEMENT UND HERSTELLUNGSVERFAHREN
- 专利标题： THE SEMICONDUCTOR LED DEVICE AND PRODUCING METHOD
- 专利标题（中）： HELLBLEITER-LED-BAUELEMENT UND HERSTELLUNGSVERFAHREN
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申请号： EP01965717申请日： 2001-09-04
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公开(公告)号： EP1320902A4公开(公告)日： 2006-10-04
- 发明人: KIM CHANG-TAE
- 申请人： EPIVALLEY CO LTD , SAMSUNG ELECTRO MECH
- 专利权人： EPIVALLEY CO LTD,SAMSUNG ELECTRO MECH
- 当前专利权人： EPIVALLEY CO LTD,SAMSUNG ELECTRO MECH
- 优先权： KR20000052169 2000-09-04
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L33/44 ; H01S5/028 ; H01S5/323 ; H01L33/00 ; H01L21/28 ; H01S5/30
摘要：
The present invention provides a semiconductor device with InxGal-xN crystal passivation layer and manufacturing method thereof which effectively blocks the leakage current between the surface and boundary of a device and a pn-junction boundary, and enhances the light emission efficiency as forming new structural semiconductor devices by removing the conventional dielectric passivation layer and using InxGal-xN crystal layer instead. A semiconductor device with gallium nitride type crystal passivation layer, wherein said semiconductor device has a p-n junction diode construction and forms an InxGal-xN crystal passivation layer with a specified thickness and a width around the edge of the upper surface of p-GaN layer which is the top layer of the semiconductor device.
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