发明公开
EP1324398A3 Metal oxide semiconductor thin film and method of producing the same
审中-公开
金属氧化物半导体薄膜及其制造方法
- 专利标题： Metal oxide semiconductor thin film and method of producing the same
- 专利标题（中）： 金属氧化物半导体薄膜及其制造方法
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申请号： EP02258551.7申请日： 2002-12-11
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公开(公告)号： EP1324398A3公开(公告)日： 2007-05-16
- 发明人: Iwata, Kakuya
- 申请人： National Institute of Advanced Industrial Science and Technology
- 申请人地址： 1-3-1, Kasumigaseki, Chiyoda-ku Tokyo-to JP
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： 1-3-1, Kasumigaseki, Chiyoda-ku Tokyo-to JP
- 代理机构： Smith, Norman Ian
- 优先权： JP2001378118 20011212
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L33/00
摘要：
An organometal having as molecular structural elements both a semiconductor anion atom and cation atom is applied to a substrate and reacted under heating to obtain p-type and n-type metal oxide semiconductor thin films whose p-n junctions enable fabrication of a semiconductor device, light-emitting element or solar cell.
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