发明公开
- 专利标题： PLASMA PROCESSING DEVICE
- 专利标题（中）： 装置的等离子体过程
-
申请号： EP02708711.3申请日： 2002-03-28
-
公开(公告)号： EP1376669A1公开(公告)日： 2004-01-02
- 发明人: OHMI, Tadahiro , HIRAYAMA, Masaki, c/o New Ind. Creation Hatch.Cent , SUGAWA, Shigetoshi, c/o Manag. of Science & Techn. , GOTO, Tetsuya, c/o NEW IND. CR. HATCHERY CTER
- 申请人： Ohmi, Tadahiro , TOKYO ELECTRON LIMITED
- 申请人地址： 1-17-301, Komegabukuro 2-chome, Aoba-ku Sendai-shi, Miyagi-ken 980-0813 JP
- 专利权人： Ohmi, Tadahiro,TOKYO ELECTRON LIMITED
- 当前专利权人： Ohmi, Tadahiro,TOKYO ELECTRON LIMITED
- 当前专利权人地址： 1-17-301, Komegabukuro 2-chome, Aoba-ku Sendai-shi, Miyagi-ken 980-0813 JP
- 代理机构： Liesegang, Eva
- 优先权： JP2001094271 20010328
- 国际公布： WO2002080250 20021010
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H05H1/46 ; H01L21/3065
摘要：
In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying'waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
公开/授权文献
- EP1376669B1 PLASMA PROCESSING DEVICE 公开/授权日：2007-05-09
信息查询
IPC分类:
