发明公开
- 专利标题: High efficiency single port resonant line
- 专利标题(中): Hocheffiziente Einzeltor-Resonanzleitung
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申请号: EP03012280.8申请日: 2003-06-11
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公开(公告)号: EP1376739A1公开(公告)日: 2004-01-02
- 发明人: Killen, William Dean , Pike, Randy T.
- 申请人: HARRIS CORPORATION
- 申请人地址: 1025 West NASA Boulevard Melbourne Florida 32919 US
- 专利权人: HARRIS CORPORATION
- 当前专利权人: HARRIS CORPORATION
- 当前专利权人地址: 1025 West NASA Boulevard Melbourne Florida 32919 US
- 代理机构: Schmidt, Steffen J., Dipl.-Ing.
- 优先权: US185144 20020627
- 主分类号: H01P1/203
- IPC分类号: H01P1/203
摘要:
A printed circuit for processing radio frequency signals. The printed circuit includes a substrate. The substrate can be a meta material and can include at least one dielectric layer. The dielectric layer can have a first set of dielectric properties over a first region and a second set of dielectric properties over a second region. The dielectric permittivity and/or magnetic permeability of the second set of dielectric properties can be different than the first set of dielectric properties. The printed circuit also can include a single port resonant line and a ground coupled to the substrate. The dielectric properties can be controlled to adjust the size of the resonant line. The dielectric properties also can be controlled to adjust an impedance, quality factor and/or capacitance on the resonant line. Resonant characteristics of the resonant line can be distributed through the substrate.
公开/授权文献
- EP1376739B1 High efficiency single port resonant line 公开/授权日:2006-10-04
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