发明公开
EP1391543A1 METHOD FOR PREPARING OXIDE CRYSTAL FILM/SUBSTRATE COMPOSITE AND SOLUTION FOR USE THEREIN
审中-公开
用于生产OXIDKRISTALLFILM; 基底以及复合解使用中出现
- 专利标题: METHOD FOR PREPARING OXIDE CRYSTAL FILM/SUBSTRATE COMPOSITE AND SOLUTION FOR USE THEREIN
- 专利标题(中): 用于生产OXIDKRISTALLFILM; 基底以及复合解使用中出现
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申请号: EP02728058.5申请日: 2002-05-15
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公开(公告)号: EP1391543A1公开(公告)日: 2004-02-25
- 发明人: SUGA, Toshihiro,Int. Superconductivity, Tech. Ctr. , YAMADA, Yasuji, Int. Superconductivity, Tech. Ctr. , MAEDA, Toshihiko,Int. Superconductivity,Tech. Ctr. , KIM,Seok.Beom, Int. Superconductivity, Tech. Ctr. , KUROSAKI,Haruhiko,Int.Superconductivity,Tech. Ctr. , YAMADA, Yutaka,Int. Superconductivity,Tech. Ctr. , HIRABAYASHI, Izumi,, Int. Superconductivity, T. C. , IIJIMA, Yasuhiro, Fujikura Ltd. , WATANABE, Tomonori, The Furukawa Electric Co., Ltd , YOSHINO, Hisahi,Toshiba Corp., Corporate,Res & Dev , MURANAKA, Koji,Sumitomo Electric Industries, Ltd.
- 申请人: International Superconductivity technology Center, The Juridical Foundation , Fujikura Ltd.
- 申请人地址: Eishin Kaihatsu Bldg., 6th Floor, 34-3, Shinbashi 5-chome, Minato-ku Tokyo 105-0004 JP
- 专利权人: International Superconductivity technology Center, The Juridical Foundation,Fujikura Ltd.
- 当前专利权人: International Superconductivity technology Center, The Juridical Foundation,Fujikura Ltd.
- 当前专利权人地址: Eishin Kaihatsu Bldg., 6th Floor, 34-3, Shinbashi 5-chome, Minato-ku Tokyo 105-0004 JP
- 代理机构: Poulin, Gérard
- 优先权: JP2001144534 20010515; JP2001144541 20010515
- 国际公布: WO2002101123 20021219
- 主分类号: C30B29/22
- IPC分类号: C30B29/22
摘要:
There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO-CuO-BaF 2 system or a BaO-CuO-Ag-BaF 2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850°C.
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