发明公开
EP1408545A2 A method of producing a substrate by transferring a donor wafer comprising foreign species, and an associated donor wafer
有权
一种用于通过供体的转移准备基板杂质晶片，和一个相应的供体晶片工艺
- 专利标题： A method of producing a substrate by transferring a donor wafer comprising foreign species, and an associated donor wafer
- 专利标题（中）： 一种用于通过供体的转移准备基板杂质晶片，和一个相应的供体晶片工艺
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申请号： EP03292465.6申请日： 2003-10-07
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公开(公告)号： EP1408545A2公开(公告)日： 2004-04-14
- 发明人: Letertre, Fabrice , Levaillant, Yves Mathieu , Jalaguier, Eric
- 申请人： S.O.I. Tec Silicon on Insulator Technologies , COMMISSARIAT A L'ENERGIE ATOMIQUE
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I. Tec Silicon on Insulator Technologies,COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人： S.O.I. Tec Silicon on Insulator Technologies,COMMISSARIAT A L'ENERGIE ATOMIQUE
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 代理机构： Le Forestier, Eric
- 优先权： FR0212405 20021007
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The invention provides a method of producing a substrate comprising a thin crystalline layer transferred from a donor wafer onto a support, said thin layer including one or more foreign species intended to modify its properties, the method being characterized in that it comprises the following steps in sequence:
implanting atomic species into a zone of the donor wafer (20) that is substantially free of foreign species (24), to form an embrittlement zone (22) below a bonding face, the embrittlement zone and the bonding face delimiting a thin layer (23) to be transferred;
bonding the donor wafer (20), at the level of its bonding face, to a support (10);
applying stresses in order to produce a cleavage in the region of the embrittlement zone (22) to obtain a substrate comprising the support (10) and the thin layer (23);
and in that it further comprises a step of diffusing foreign species (24) into the thickness of the thin layer (23) prior to implantation or after fracture, suited to modify the properties of the thin layer, in particular its electrical or optical properties.
Application to producing substrates with a thin InP layer rendered semi-insulating by iron diffusion.
implanting atomic species into a zone of the donor wafer (20) that is substantially free of foreign species (24), to form an embrittlement zone (22) below a bonding face, the embrittlement zone and the bonding face delimiting a thin layer (23) to be transferred;
bonding the donor wafer (20), at the level of its bonding face, to a support (10);
applying stresses in order to produce a cleavage in the region of the embrittlement zone (22) to obtain a substrate comprising the support (10) and the thin layer (23);
and in that it further comprises a step of diffusing foreign species (24) into the thickness of the thin layer (23) prior to implantation or after fracture, suited to modify the properties of the thin layer, in particular its electrical or optical properties.
Application to producing substrates with a thin InP layer rendered semi-insulating by iron diffusion.
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