发明公开
EP1443546A2 Working method of metal material and semiconductor apparatus fabricated by the method
审中-公开
Verfahren zur Metallbearbeitung und mit diesem Verfahren hergestelltes Halbleiterbauelement
- 专利标题： Working method of metal material and semiconductor apparatus fabricated by the method
- 专利标题（中）： Verfahren zur Metallbearbeitung und mit diesem Verfahren hergestelltes Halbleiterbauelement
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申请号： EP04000247.9申请日： 2004-01-08
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公开(公告)号： EP1443546A2公开(公告)日： 2004-08-04
- 发明人: Kobayashi, Masuyuki , Harada, Kouji , Tokuda, Hiroatsu , Ojima, Kazuo
- 申请人： Hitachi Ltd.
- 申请人地址： 6, Kanda Surugadai 4-chome, Chiyoda-ku Tokyo JP
- 专利权人： Hitachi Ltd.
- 当前专利权人： Hitachi Ltd.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome, Chiyoda-ku Tokyo JP
- 代理机构： Beetz & Partner Patentanwälte
- 优先权： JP2003018185 20030128
- 主分类号： H01L21/48
- IPC分类号： H01L21/48
摘要：
A method comprising constraining a circumference of a blank of a Cu-Mo alloy and one of surfaces to be worked with the use of a die, and using a working punch (33) or a counter punch (34) to apply working pressures to the other of the surfaces to be worked, thereby obtaining a cup-shaped body (27), and a semiconductor apparatus comprising a semiconductor chip fixed to an inner bottom surface of a cup-shaped diode base (27).
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