发明公开
- 专利标题： COMPLEMENTARY MIS DEVICE
- 专利标题（中）： 补充MIS设备
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申请号： EP02786074.1申请日： 2002-12-10
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公开(公告)号： EP1455393A1公开(公告)日： 2004-09-08
- 发明人: OHMI, Tadahiro , Kotani, Koji, c/o Dept. of Elec. Eng. Graduate , Sugawa, Sh., c/o Management Science & Tech.
- 申请人： Ohmi, Tadahiro , Tokyo Electron Limited
- 申请人地址： 301, 1-17, Komegafukuro 2-chome, Aoba-ku Sendai-shi, Miyagi 980-0813 JP
- 专利权人： Ohmi, Tadahiro,Tokyo Electron Limited
- 当前专利权人： Ohmi, Tadahiro,Tokyo Electron Limited
- 当前专利权人地址： 301, 1-17, Komegafukuro 2-chome, Aoba-ku Sendai-shi, Miyagi 980-0813 JP
- 代理机构： Liesegang, Eva
- 优先权： JP2001380534 20011213
- 国际公布： WO2003054962 20030703
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.
公开/授权文献
- EP1455393B1 COMPLEMENTARY MIS DEVICE 公开/授权日：2009-03-25
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