发明公开
- 专利标题: CONTROLLED GROWTH OF SINGLE-WALL CARBON NANOTUBES
- 专利标题(中): 在纳米尺寸的控制生长壁碳管
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申请号: EP02795995.6申请日: 2002-12-18
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公开(公告)号: EP1463853A1公开(公告)日: 2004-10-06
- 发明人: PFEFFERLE, Lisa , HALLER, Gary,Jonathan Edwards College , CIUPARU, Dragos
- 申请人: YALE UNIVERSITY
- 申请人地址: Office of Cooperative Research,Two Whitney Avenue New Haven, CT 06511 US
- 专利权人: YALE UNIVERSITY
- 当前专利权人: YALE UNIVERSITY
- 当前专利权人地址: Office of Cooperative Research,Two Whitney Avenue New Haven, CT 06511 US
- 代理机构: Chapman, Paul Gilmour
- 优先权: US341773P 20011218
- 国际公布: WO2003052182 20030626
- 主分类号: D01F9/12
- IPC分类号: D01F9/12
摘要:
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (± 0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.
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