发明公开
EP1465259A3 Photoelectric X-ray converter, its driving method, and system including the photoelectric X-ray converter 失效
光电Röntgenstrahlungsumwandler,其控制方法和系统与该光电Röntgenstrahlungsumwandler

  • 专利标题: Photoelectric X-ray converter, its driving method, and system including the photoelectric X-ray converter
  • 专利标题(中): 光电Röntgenstrahlungsumwandler,其控制方法和系统与该光电Röntgenstrahlungsumwandler
  • 申请号: EP04010710.4
    申请日: 1994-12-27
  • 公开(公告)号: EP1465259A3
    公开(公告)日: 2010-03-03
  • 发明人: Kaifu, NoriyukiMizutani, HidemasaTakeda, ShinichiKobayashi, IsaoItabashi, Satoshi
  • 申请人: CANON KABUSHIKI KAISHA
  • 申请人地址: 30-2, Shimomaruko 3-chome, Ohta-ku Tokyo JP
  • 专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人: CANON KABUSHIKI KAISHA
  • 当前专利权人地址: 30-2, Shimomaruko 3-chome, Ohta-ku Tokyo JP
  • 代理机构: TBK-Patent
  • 优先权: JP33169093 19931227; JP19664094 19940822; JP19664194 19940822; JP19664294 19940822; JP19664394 19940822; JP19664494 19940822; JP19664594 19940822; JP19664894 19940822; JP19667094 19940822; JP31339294 19941216
  • 主分类号: H01L27/146
  • IPC分类号: H01L27/146
Photoelectric X-ray converter, its driving method, and system including the photoelectric X-ray converter
摘要:
A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion 100 in which a first electrode layer 2, an insulating layer 70 for inhibiting carriers from transferring, a photoelectric converting semiconductor layer 4 of a non-single-crystal type, an injection blocking layer 5 for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer 6 are laminated in this order on an insulating substrate 1.
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