发明公开
EP1469599A3 Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof
有权
Dünnschicht-Resonator von Luftspaltbauart,Duplexer mit dem Resonator und deren Herstellungsverfahren
- 专利标题: Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof
- 专利标题(中): Dünnschicht-Resonator von Luftspaltbauart,Duplexer mit dem Resonator und deren Herstellungsverfahren
-
申请号: EP04252170.8申请日: 2004-04-14
-
公开(公告)号: EP1469599A3公开(公告)日: 2005-05-18
- 发明人: Park, Yun-Kwon , Song, In-sang , Ha, Byeoung-ju , Song, II-jong , Kim, Duck-hwan
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: 416 Maetan-dong, Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: 416 Maetan-dong, Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 代理机构: Ertl, Nicholas Justin
- 优先权: KR2003024720 20030418; KR2003049918 20030721
- 主分类号: H03H9/17
- IPC分类号: H03H9/17 ; H03H3/02
摘要:
An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
公开/授权文献
信息查询
IPC分类: