发明公开
EP1474832A4 METHOD AND SYSTEM FOR MOLECULAR CHARGE STORAGE FIELD EFFECT TRANSISTOR
审中-公开
方法和系统分子电荷MEMORY场效应晶体管
- 专利标题： METHOD AND SYSTEM FOR MOLECULAR CHARGE STORAGE FIELD EFFECT TRANSISTOR
- 专利标题（中）： 方法和系统分子电荷MEMORY场效应晶体管
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申请号： EP02805137申请日： 2002-12-12
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公开(公告)号： EP1474832A4公开(公告)日： 2007-08-29
- 发明人: MISRA VEENA , BOCIAN DAVID F , KUHR WERNER G , LINDSEY JONATHAN S
- 申请人： UNIV CALIFORNIA , UNIV NORTH CAROLINA STATE
- 专利权人： UNIV CALIFORNIA,UNIV NORTH CAROLINA STATE
- 当前专利权人： UNIV CALIFORNIA,UNIV NORTH CAROLINA STATE
- 优先权： US1799901 2001-12-14
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; H01L21/8247 ; G11C13/02 ; H01L27/00 ; H01L27/115 ; H01L27/28 ; H01L29/788 ; H01L29/792 ; H01L51/05
摘要：
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules (120) between a gate (110) and channel (105) of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
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