发明公开
EP1479137A2 EINRICHTUNG ZUR ERZEUGUNG VON TERAHERTZ−STRAHLUNG SOWIE HALBLEITERBAUELEMENT
有权
DEVICE形成太赫兹辐射与半导体元件
- 专利标题: EINRICHTUNG ZUR ERZEUGUNG VON TERAHERTZ−STRAHLUNG SOWIE HALBLEITERBAUELEMENT
- 专利标题(英): Device for generating terahertz radiation, and a semiconductor component
- 专利标题(中): DEVICE形成太赫兹辐射与半导体元件
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申请号: EP03704092.0申请日: 2003-02-18
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公开(公告)号: EP1479137A2公开(公告)日: 2004-11-24
- 发明人: UNTERRAINER, Karl , STRASSER, Gottfried , DARMO, Juraj , STINGL, Andreas , LE, Tuan
- 申请人: Femtolasers Produktions GmbH
- 申请人地址: Kleinengersdorferstrasse 24 2100 Korneuburg AT
- 专利权人: Femtolasers Produktions GmbH
- 当前专利权人: Femtolasers Produktions GmbH
- 当前专利权人地址: Kleinengersdorferstrasse 24 2100 Korneuburg AT
- 代理机构: Sonn & Partner Patentanwälte
- 优先权: AT3122002 20020228
- 国际公布: WO2003073563 20030904
- 主分类号: H01S3/108
- IPC分类号: H01S3/108
摘要:
The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M4), preferably a resonator end mirror, is provided with a semiconductor layer (8), which is partially transparent to the laser radiation of the short pulse laser (1), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser (1), and on which the electrodes (9, 10) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.
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