发明授权
EP1506573B1 MANUFACTURING METHOD FOR ULTRA SMALL THIN WINDOWS IN FLOATING GATE TRANSISTORS
有权
PROCESS超轻薄小窗口，在浮栅晶体管
- 专利标题： MANUFACTURING METHOD FOR ULTRA SMALL THIN WINDOWS IN FLOATING GATE TRANSISTORS
- 专利标题（中）： PROCESS超轻薄小窗口，在浮栅晶体管
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申请号： EP03723943.1申请日： 2003-04-04
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公开(公告)号： EP1506573B1公开(公告)日： 2009-10-14
- 发明人: DAEMEN, Eleonore , RENNINGER, Alan L. , LOJEK, Bohumil
- 申请人： ATMEL CORPORATION
- 申请人地址： 2325 Orchard Parkway San Jose, California 95131 US
- 专利权人： ATMEL CORPORATION
- 当前专利权人： ATMEL CORPORATION
- 当前专利权人地址： 2325 Orchard Parkway San Jose, California 95131 US
- 代理机构： Käck, Jürgen
- 优先权： US143225 20020509
- 国际公布： WO2003096405 20031120
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/28
摘要：
A tiny oxide window, the upper layers (55, 57) are etched leaving the poly-two layer (57) over the laywe (41). The optional nitride spacers (51, 53) remain as protective barriers for the poly-one layer and its underlying oxyde layer. Source and implants (22, 24) may be made using the ONO layer as a self-alignment tool.
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