发明公开
EP1508924A2 Electrodes for organic electronic devices
审中-公开
Elektrodenfürorganische elektronische Anordnungen
- 专利标题： Electrodes for organic electronic devices
- 专利标题（中）： Elektrodenfürorganische elektronische Anordnungen
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申请号： EP04019507.5申请日： 2004-08-17
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公开(公告)号： EP1508924A2公开(公告)日： 2005-02-23
- 发明人: Moriya, Soichi , Kawase, Takeo , Harada, Mitsuaki
- 申请人： SEIKO EPSON CORPORATION
- 申请人地址： 4-1, Nishi-shinjuku 2-chome Shinjuku-ku, Tokyo 163-0811 JP
- 专利权人： SEIKO EPSON CORPORATION
- 当前专利权人： SEIKO EPSON CORPORATION
- 当前专利权人地址： 4-1, Nishi-shinjuku 2-chome Shinjuku-ku, Tokyo 163-0811 JP
- 代理机构： HOFFMANN - EITLE
- 优先权： JP2003207936 20030819; JP2003423745 20031219; JP2004162538 20040531
- 主分类号： H01L51/20
- IPC分类号： H01L51/20
摘要：
The present invention aims to provide an electrode that is economically produced and capable of efficiently injecting holes, a method for forming an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment.
A thin-film transistor 1 according to the present invention is a top-gate thin-film transistor. The thin-film transistor 1 includes a source electrode 20a and a drain electrode 20b that are placed separately from each other. The thin-film transistor 1 also includes an organic semiconductor layer 30 that is laid out between the source electrode 20a and the drain electrode 20b, and a gate insulating layer 40 that is provided between the organic semiconductor layer 30 and a gate electrode 50. This structure is mounted on a substrate 10. Each of the source electrode 20a and the drain electrode 20b is composed of two layers, that is, an underlying electrode layer 21 and a surface electrode layer 22. The surface electrode layer 22 includes an oxide containing at least one of Cu, Ni, Co, Ag.
A thin-film transistor 1 according to the present invention is a top-gate thin-film transistor. The thin-film transistor 1 includes a source electrode 20a and a drain electrode 20b that are placed separately from each other. The thin-film transistor 1 also includes an organic semiconductor layer 30 that is laid out between the source electrode 20a and the drain electrode 20b, and a gate insulating layer 40 that is provided between the organic semiconductor layer 30 and a gate electrode 50. This structure is mounted on a substrate 10. Each of the source electrode 20a and the drain electrode 20b is composed of two layers, that is, an underlying electrode layer 21 and a surface electrode layer 22. The surface electrode layer 22 includes an oxide containing at least one of Cu, Ni, Co, Ag.
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