发明公开
EP1511072A3 Post-etch clean process for porous low dielectric constant materials
审中-公开
用于与低K材料pöröse蚀刻后进行清洗的方法
- 专利标题： Post-etch clean process for porous low dielectric constant materials
- 专利标题（中）： 用于与低K材料pöröse蚀刻后进行清洗的方法
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申请号： EP04104013.0申请日： 2004-08-20
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公开(公告)号： EP1511072A3公开(公告)日： 2006-02-22
- 发明人: Beauregard Smith, Patricia , Park, Heungsoo , Zielinski, Eden
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： P.O. Box 655474, 13500 North Central Expressway Dallas, TX 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： P.O. Box 655474, 13500 North Central Expressway Dallas, TX 75265 US
- 代理机构： Holt, Michael
- 优先权： US647985P 20030826
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/768 ; G03F7/42
摘要：
Standard post-etch photoresist clean procedures for porous dielectric materials in semiconductor device manufacturing may involve wet cleans in which a solvent is used for polymer residue removal. In many cases, the components of the solvent are absorbed into porous film layers (102) and can later volatilize during subsequent metal (110) deposition steps. A low pressure anneal of limited duration and high temperature, performed after the wet clean and prior to metal deposition, satisfactorily removes the absorbed components.
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