发明公开
EP1535346A2 DISPOSITIF SEMICONDUCTEUR DE PUISSANCE QUASI-VERTICAL SUR SUBSTRAT COMPOSITE
审中-公开
准垂直功率半导体组件上的底板连接
- 专利标题： DISPOSITIF SEMICONDUCTEUR DE PUISSANCE QUASI-VERTICAL SUR SUBSTRAT COMPOSITE
- 专利标题（英）： Quasi-vertical power semiconductor device on a composite substrate
- 专利标题（中）： 准垂直功率半导体组件上的底板连接
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申请号： EP03780259.2申请日： 2003-09-01
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公开(公告)号： EP1535346A2公开(公告)日： 2005-06-01
- 发明人: TEMPLIER, François , DI CIOCCIO, Léa , BILLON, Thierry , LETERTRE, Fabrice
- 申请人： Commissariat A L'Energie Atomique , S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： 31/33, Rue de la Fédération 75752 Paris 15ème FR
- 专利权人： Commissariat A L'Energie Atomique,S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： Commissariat A L'Energie Atomique,S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： 31/33, Rue de la Fédération 75752 Paris 15ème FR
- 代理机构： Poulin, Gérard
- 优先权： FR0210883 20020903
- 国际公布： WO2004027878 20040401
- 主分类号： H01L29/872
- IPC分类号： H01L29/872
摘要：
The invention relates to a power semiconductor device made of an epitaxied semiconductor material on a stacked structure (10), comprising a semiconductor material layer (13) which is applied to a first surface of a support substrate (11) and is integral with the support substrate (11) by means of an insulating layer (12), said support substrate comprising electric conduction means between the first surface and the second surface, the applied semiconductor material layer (13) acting as an epitaxy support layer for the epitaxied semiconductor material (14, 15).Means for electric connection (16, 17) of said device are provided on the epitaxied semiconductor material and on the second surface of the support substrate, whereby an electric connection via the electrically insulating layer and electric conduction means electrically links the epitaxied semiconductor material (14, 15) to electric connection means (17) provided on the second surface of the support substrate (11).
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