发明公开
- 专利标题: STRAHLUNGSEMITTIERENDES HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG
- 专利标题(英): Radiation-emitting semiconductor component and production method
- 专利标题(中): 半导体部件及其制造方法
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申请号: EP03750322.4申请日: 2003-09-05
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公开(公告)号: EP1547162A2公开(公告)日: 2005-06-29
- 发明人: EISERT, Dominik , ILLEK, Stefan , SCHMID, Wolfgang
- 申请人: Osram Opto Semiconductors GmbH
- 申请人地址: Wernerwerkstrasse 2 93049 Regensburg DE
- 专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人地址: Wernerwerkstrasse 2 93049 Regensburg DE
- 代理机构: Epping Hermann & Fischer
- 优先权: DE10245631 20020930
- 国际公布: WO2004032247 20040415
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
The aim of the invention is to reduce or compensate thermal stress created within a semiconductor component. Said aim is achieved by a semiconductor component comprising a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact points, and a vertically or horizontally structured carrier substrate, and a method for producing a semiconductor component. Thermal stress is created by changes in temperature during processing and operation as well as due to the different coefficients of expansion of the semiconductor and the carrier substrate. The inventive carrier substrate is structured in such a way that thermal stress is reduced or compensated to a degree that is sufficient for the component not to break down.
公开/授权文献
- EP1547162B1 HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG 公开/授权日:2015-03-04
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