发明授权
EP1554618B1 Method of fabricating a silica ultra-high Q micro-resonator on silicon substrate
有权
硅衬底上制造微腔与超高质量的熔融二氧化硅的方法
- 专利标题： Method of fabricating a silica ultra-high Q micro-resonator on silicon substrate
- 专利标题（中）： 硅衬底上制造微腔与超高质量的熔融二氧化硅的方法
-
申请号： EP03816213.7申请日： 2003-10-02
-
公开(公告)号： EP1554618B1公开(公告)日： 2007-09-12
- 发明人: ARMANI, Deniz, K. , KIPPENBERG, Tobias, J. , SPILLANE, Sean, M. , VAHALA, Kerry, J.
- 申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
- 申请人地址： 1200 East California Boulevard, Mail Code 201-85 Pasadena, CA 91125 US
- 专利权人： CALIFORNIA INSTITUTE OF TECHNOLOGY
- 当前专利权人： CALIFORNIA INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： 1200 East California Boulevard, Mail Code 201-85 Pasadena, CA 91125 US
- 代理机构： Freeman, Jacqueline Carol
- 优先权： US415412P 20021002
- 国际公布： WO2004109351 20041216
- 主分类号： G02B6/293
- IPC分类号： G02B6/293
摘要：
A micro-cavity resonator (100) including a micro-cavity (110) capable of high and ultra-high Q values and a silicon substrate (120). Portions of the silicon substrate (120) located below a periphery of the micro-cavity (110) are removed to form a pillar, which supports the microcavity (110). Optical energy travels along an inner surface of the micro-cavity.
公开/授权文献
信息查询
