发明授权
EP1561737B1 SILICON CARBIDE MATRIX COMPOSITE MATERIAL, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING PART OF SILICON CARBIDE MATRIX COMPOSITE MATERIAL
有权
碳化硅复合材料，工艺用于生产碳化硅，复合材料的部分PRODUCING和方法
- 专利标题： SILICON CARBIDE MATRIX COMPOSITE MATERIAL, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING PART OF SILICON CARBIDE MATRIX COMPOSITE MATERIAL
- 专利标题（中）： 碳化硅复合材料，工艺用于生产碳化硅，复合材料的部分PRODUCING和方法
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申请号： EP03733472.9申请日： 2003-06-18
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公开(公告)号： EP1561737B1公开(公告)日： 2011-12-14
- 发明人: SUYAMA, Shoko Toshiba Corporation , KAMEDA, Tsuneji Toshiba Corporation , ITOH, Yoshiyasu Toshiba Corporation
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： 1-1, Shibaura 1-chome Minato-ku Tokyo 105-8001 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2002176680 20020618; JP2002190588 20020628
- 国际公布： WO2004007401 20040122
- 主分类号： C04B35/56
- IPC分类号： C04B35/56 ; C04B37/00
摘要：
Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 wt.% based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).
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