发明公开
EP1610184A1 Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same
审中-公开
抗蚀剂图案增厚的组合物，工艺及其制造，它们的制备半导体器件和工艺
- 专利标题： Resist pattern thickening material and process for forming the same, and semiconductor device and process for manufacturing the same
- 专利标题（中）： 抗蚀剂图案增厚的组合物，工艺及其制造，它们的制备半导体器件和工艺
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申请号： EP04025761.0申请日： 2004-10-29
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公开(公告)号： EP1610184A1公开(公告)日： 2005-12-28
- 发明人: Nozaki, Koji , Namiki, Takahisa , Kozawa, Miwa
- 申请人： FUJITSU LIMITED
- 申请人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 代理机构： HOFFMANN EITLE
- 优先权： JP2004177051 20040615; JP2004295175 20041007
- 主分类号： G03F7/40
- IPC分类号： G03F7/40 ; G03F7/00 ; H01L21/027
摘要：
The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a polyhydric alcohol. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
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