发明公开
- 专利标题： SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING THE SAME
- 专利标题（中）： 谢谢ZE SEINER HERSTELLUNG
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申请号： EP04724878.6申请日： 2004-03-31
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公开(公告)号： EP1617483A1公开(公告)日： 2006-01-18
- 发明人: Ohmi, Tadahiro , Teramoto, Akinobu , Wakamatsu, Hidetoshi , Kobayashi, Yasuo,c/o Tokyo Electron Limited
- 申请人： TOKYO ELECTRON LIMITED , OHMI, Tadahiro
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku, Tokyo 107-8481 JP
- 专利权人： TOKYO ELECTRON LIMITED,OHMI, Tadahiro
- 当前专利权人： TOKYO ELECTRON LIMITED,OHMI, Tadahiro
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku, Tokyo 107-8481 JP
- 代理机构： Liesegang, Eva
- 优先权： JP2003100170 20030403
- 国际公布： WO2004090991 20041021
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336 ; H01L21/318
摘要：
In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO 2 from being formed.
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