To prevent electrostatic breakdown and improve reliability concerning surface-emitting type devices and methods for manufacturing the same.
A surface-emitting type device includes a substrate (10), a light emitting element section (20) above the substrate (10), including a first semiconductor section (22) of a first conductivity type, a second semiconductor section (24) that functions as an active layer, and a third semiconductor section (26), (28) of a second conductivity type which are disposed from the side of the substrate (10), a rectification element section (40) above the substrate (10), including a first supporting section (42) composed of an identical composition of the first semiconductor section (22), a second supporting section (44) composed of an identical composition of the second semiconductor section (24), a fourth semiconductor section (46, 48), and a fifth semiconductor section (50), which are disposed from the side of the substrate (10), and first and second electrodes (30), (32) for driving the light emitting element section (20). The fourth and fifth semiconductor sections (46, 48, 50) are connected in parallel between the first and second electrodes (30, 32), and have a rectification action in a reverse direction with respect to the light emitting element section (20).