发明公开
EP1632026A2 TEMPERATURE AND PROCESS COMPENSATION OF MOSFET OPERATING IN SUB-THRESHOLD MODE
审中-公开
温度和过程补偿在亚阈值模式下工作MOSFET
- 专利标题： TEMPERATURE AND PROCESS COMPENSATION OF MOSFET OPERATING IN SUB-THRESHOLD MODE
- 专利标题（中）： 温度和过程补偿在亚阈值模式下工作MOSFET
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申请号： EP04753017.5申请日： 2004-05-20
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公开(公告)号： EP1632026A2公开(公告)日： 2006-03-08
- 发明人: ZHOU, Jianjun , ZHANG, Xuejun
- 申请人： Qualcomm, Incorporated
- 申请人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人： Qualcomm, Incorporated
- 当前专利权人： Qualcomm, Incorporated
- 当前专利权人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US445218 20030523
- 国际公布： WO2004107566 20041209
- 主分类号： H03G1/04
- IPC分类号： H03G1/04 ; H03F1/30
摘要：
Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.
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