发明授权
EP1655772B1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD
有权
半导体元件，制造用于等离子体CVD的半导体元件和天然气
- 专利标题： SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND GAS FOR PLASMA CVD
- 专利标题（中）： 半导体元件，制造用于等离子体CVD的半导体元件和天然气
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申请号： EP04771570.1申请日： 2004-08-12
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公开(公告)号： EP1655772B1公开(公告)日： 2011-09-28
- 发明人: Kobayashi, Yasuo, c/o Tokyo Electron AT Ltd. , Kawamura, Kohei, c/o Tokyo Electron AT Ltd , Ohmi, Tadahiro , Teramoto, Akinobu , Sugimoto, Tatsuya , Yamada, Toshiro , Tanaka, Kimiaki
- 申请人： TOKYO ELECTRON LIMITED , Zeon Corporation
- 申请人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 专利权人： TOKYO ELECTRON LIMITED,Zeon Corporation
- 当前专利权人： TOKYO ELECTRON LIMITED,Zeon Corporation
- 当前专利权人地址： 3-6 Akasaka 5-chome Minato-ku Tokyo 107-8481 JP
- 代理机构： Liesegang, Eva
- 优先权： JP2003293739 20030815; JP2003293862 20030815; JP2003311555 20030903
- 国际公布： WO2005017991 20050224
- 主分类号： H01L21/314
- IPC分类号： H01L21/314
摘要：
A semiconductor device having an insulating film comprising a fluorine-doped carbon film having experienced a thermal history under a temperature of 420°C or less, characterized in that the fluorine-doped carbon film has a hydrogen atom content of 3 atomic % or less before the experience of the thermal history.
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