Support for vertically oriented capacitors during the formation of a semiconductor device

发明授权

EP1665372B1 Support for vertically oriented capacitors during the formation of a semiconductor device 有权

标题翻译：制造半导体装置的过程中为垂直定向的电容器支撑

请登陆查看更多内容

专利标题： Support for vertically oriented capacitors during the formation of a semiconductor device
专利标题（中）： 制造半导体装置的过程中为垂直定向的电容器支撑
申请号： EP04786595.1

申请日： 2004-08-26
公开(公告)号： EP1665372B1

公开(公告)日： 2011-05-18
发明人: MANNING, Montgomery, H.
申请人： Round Rock Research, LLC
申请人地址： 26 Deer Creek Lane Mount Kisco, NY 10549 US
专利权人： Round Rock Research, LLC
当前专利权人： Round Rock Research, LLC
当前专利权人地址： 26 Deer Creek Lane Mount Kisco, NY 10549 US
代理机构： Hackett, Sean James
优先权： US656732 20030904
国际公布： WO2005024936 20050317
主分类号： H01L21/8242
IPC分类号： H01L21/8242 ; H01L27/108 ; H01L21/02

Support for vertically oriented capacitors during the formation of a semiconductor device

摘要：

A method for forming double-sided capacitors for a semiconductor device includes forming a dielectric structure (86) which supports capacitor bottom plates (110) during wafer processing. The structure is particularly useful for supporting the bottom plates during removal of a base dielectric layer (84) to expose the outside of the bottom plates to form a double-sided capacitor. The support structure further supports the bottom plates during formation of a cell dielectric layer (200), a capacitor top plate (202), and final supporting dielectric (204). An inventive structure is also described.

公开/授权文献

EP1665372A2 SUPPORT FOR VERTICALLY-ORIENTED CAPACITORS DURING THE FORMATION OF A SEMICONDUCTOR DEVICE 公开/授权日：2006-06-07

信息查询

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）